SB007-03C no. a0405-1/3 applications high frequency rectification (switching regulators, converters, choppers). features low forward voltage (v f max=0.55v). fast reverse recorvery time (t rr max=10ns). low switching noise. low leakage current and high reliability due to highly reliable planar structure. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit repetitive peak reverse voltage v rrm 30 v nonrepetitive peak reverse surge voltage v rsm 35 v a verage output current i o 70 ma surge forward current i fsm 50hz sine wave, 1 cycle 2 a junction temperature tj - -55 to +125 c storage temperature tstg - -55 to +125 c marking : g tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena0405a 13107 ti im tc-00000490 / 71206 / 42506sb ms im ta-100466 any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. sanyo semiconductors d ata sheet SB007-03C schottky barrier diode 30v, 70ma rectifier
SB007-03C no. a0405-2/3 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit reverse voltage v r i r =20 a, tj=25 c30v forward voltage v f i f =70ma, tj=25 c 0.55 v reverse current i r v r =15v, tj=25 c5 a interterminal capacitance c v r =10v, f=1mhz 3.0 pf reverse recovery time t rr i f =i r =10ma, tj=25 c, see specified test circuit. 10 ns rthj-a(1) 620 c / w thermal resistance rthj-a(2) mounted in cu-foiled area of 16mm 2 ? ? ? ?
SB007-03C no. a0405-3/3 specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ps this catalog provides information as of january, 2007. specifications and information herein are subject to change without notice.
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